STGF20H60DF Descriptions

This STGF20H60DF IGBT was created with a cutting-edge patented trench gate and field stop structure. This IGBT series provides the best balance of conduction and switching losses for very high-frequency converters, maximizing efficiency. In addition, a positive VCE(sat) temperature coefficient and a highly tight parameter distribution make paralleling easy. The operating temperature of STGF20H60DF is -55°C~175°C TJ and its maximum power dissipation are 37W. STGF20H60DF has 3 pins and it is available in TO-220-3 Full Pack packaging way. The Collector-Emitter Voltage (VCEO) of STGF20H60DF is 600V and Collector-Emitter Saturation Voltage is 2V.

STGF20H60DF Features

• High-speed switching

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Short-circuit rated

• Ultrafast soft recovery antiparallel diode

STGF20H60DF Applications

• Motor control 

• UPS, PFC