APT33GF120B2RDQ2G

new-10%

Manufacturer part number:APT33GF120B2RDQ2G

Manufacturer:Microsemi Corporation

Description:IGBT 1200V 64A 357W TMAX

Case Package:SOT-23

Datasheet:APT33GF120B2RDQ2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	357W
Current Rating	64A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	64A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	31 ns
Test Condition	800V, 25A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 25A
Turn Off Time-Nom (toff)	355 ns
IGBT Type	NPT
Gate Charge	170nC
Current - Collector Pulsed (Icm)	75A
Td (on/off) @ 25°C	14ns/185ns
Switching Energy	1.315mJ (on), 1.515mJ (off)
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free