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APT33GF120B2RDQ2G

APT33GF120B2RDQ2G

APT33GF120B2RDQ2G

Microsemi Corporation

IGBT 1200V 64A 357W TMAX

SOT-23

APT33GF120B2RDQ2G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 29 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 357W
Current Rating 64A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 64A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 31 ns
Test Condition 800V, 25A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A
Turn Off Time-Nom (toff) 355 ns
IGBT Type NPT
Gate Charge 170nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 14ns/185ns
Switching Energy 1.315mJ (on), 1.515mJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $19.30000 $19.3
10 $17.54300 $175.43
25 $16.22720 $405.68
100 $14.91150 $1491.15
250 $13.59580 $3398.95
500 $12.71866 $6359.33

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