SGS10N60RUFDTU

new-10%

Manufacturer part number:SGS10N60RUFDTU

Manufacturer:ON Semiconductor

Description:IGBT 600V 16A 55W TO220F

Case Package:SOT-23

Datasheet:SGS10N60RUFDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Lifecycle Status	ACTIVE (Last Updated: 13 hours ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	55W
Current Rating	10A
Base Part Number	SG*10N60
Number of Elements	1
Element Configuration	Single
Power Dissipation	55W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	16A
Reverse Recovery Time	60ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.2V
Turn On Time	49 ns
Test Condition	300V, 10A, 20 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 10A
Turn Off Time-Nom (toff)	284 ns
Gate Charge	30nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	15ns/36ns
Switching Energy	141μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	8V
Fall Time-Max (tf)	220ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free