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STGB10NB40LZT4

  • STGB10NB40LZT4
  • STGB10NB40LZT4

STGB10NB40LZT4

STGB10NB40LZT4

STMicroelectronics

STGB10NB40LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB10NB40LZT4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 2.240009g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 18V
Max Power Dissipation 150W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 20A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGB10
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Case Connection COLLECTOR
Input Type Standard
Transistor Application AUTOMOTIVE IGNITION
Rise Time 270ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 20A
Collector Emitter Breakdown Voltage 440V
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 440V
Turn On Time 1570 ns
Test Condition 328V, 10A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A
Continuous Collector Current 20A
Turn Off Time-Nom (toff) 12000 ns
Gate Charge 28nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 1.3μs/8μs
Switching Energy 2.4mJ (on), 5mJ (off)
Gate-Emitter Thr Voltage-Max 2.2V
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.533477 $0.533477
10 $0.503280 $5.0328
100 $0.474792 $47.4792
500 $0.447917 $223.9585
1000 $0.422564 $422.564
STGB10NB40LZT4 Product Details

STGB10NB40LZT4 Description


STMicroelectronics has created an innovative family of IGBTs, PowerMESHTM, with an all-around exceptional performance using the most recent high voltage technology based on a proprietary strip arrangement. While the gate-emitter Zener provides the ESD protection, the built-in collector-gate Zener demonstrates extremely precise active clamping.



STGB10NB40LZT4 Features


  • AEC-Q101 accredited

  • Reduced threshold voltage

  • Minimal on-voltage drop

  • Low entrance fee

  • Ability to handle high current

  • Features of high voltage clamping



STGB10NB40LZT4 Applications


Switching applications


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