HGTP7N60C3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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HGTP7N60C3D Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Additional Feature
LOW CONDUCTION LOSS
Voltage - Rated DC
600V
Max Power Dissipation
60W
Current Rating
14A
Base Part Number
HGTP7N60
Number of Elements
1
Element Configuration
Single
Power Dissipation
60W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
8.5 ns
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
350 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
14A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.6V
Turn On Time
20 ns
Test Condition
480V, 7A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 7A
Turn Off Time-Nom (toff)
490 ns
Gate Charge
23nC
Current - Collector Pulsed (Icm)
56A
Switching Energy
165μJ (on), 600μJ (off)
Height
9.02mm
Length
10.28mm
Width
4.57mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.288914
$0.288914
10
$0.272560
$2.7256
100
$0.257132
$25.7132
500
$0.242577
$121.2885
1000
$0.228847
$228.847
HGTP7N60C3D Product Details
HGTP7N60C3D Description
HGTP7N60C3D is a member of UFS series N-channel IGBTs with anti-parallel hyperfast diodes provided by ON Semiconductor, which combines the high input impedance of MOSFETs with the low on-state conduction loss of bipolar transistors. It is primarily designed for various high-voltage switching applications that operate at moderate frequencies and require low conduction losses.