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STGF10NC60KD

  • STGF10NC60KD
  • STGF10NC60KD

STGF10NC60KD

STGF10NC60KD

STMicroelectronics

STGF10NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGF10NC60KD Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 25W
Current Rating 9A
Base Part Number STGF10
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 6 ns
Transistor Application POWER CONTROL
Rise Time 6ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 6.5 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 9A
Reverse Recovery Time 22 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 23 ns
Test Condition 390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Turn Off Time-Nom (toff) 242 ns
Gate Charge 19nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 17ns/72ns
Switching Energy 55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Height 16.4mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.30000 $1.3
50 $1.10260 $55.13
100 $0.90560 $90.56
500 $0.74812 $374.06
1,000 $0.59063 $0.59063
2,500 $0.55125 $1.1025
5,000 $0.52500 $2.625
STGF10NC60KD Product Details

STGF10NC60KD Description


The STGF10NC60KD device is very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. The STGF10NC60KD device is well-suited for resonant or soft-switching applications.



STGF10NC60KD Features


  • Lower on voltage drop (VCE(sat))

  • Lower CRES / CIES ratio (no cross-conduction susceptibility)

  • Very soft ultra fast recovery antiparallel diode

  • Short-circuit withstand time 10 μs

  • ROHS3 Compliant

  • No SVHC

  • Lead Free



STGF10NC60KD Applications


  • High frequency motor controls

  • SMPS and PFC in both hard switch and resonant topologies

  • Motor drives

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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