APT40GP60B2DQ2G

new-10%

Manufacturer part number:APT40GP60B2DQ2G

Manufacturer:Microsemi Corporation

Description:IGBT 600V 100A 543W TMAX

Case Package:SOT-23

Datasheet:APT40GP60B2DQ2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	543W
Current Rating	40A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	543W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	100A
Collector Emitter Breakdown Voltage	600V
Turn On Time	49 ns
Test Condition	400V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 40A
Turn Off Time-Nom (toff)	160 ns
IGBT Type	PT
Gate Charge	135nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	20ns/64ns
Switching Energy	385μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free