SI8401DB-T1-E3

new-10%

Manufacturer part number:SI8401DB-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 3.6A 2X2 4-MFP

Case Package:SOT-23

Datasheet:SI8401DB-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	33 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	65mOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.47W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.77W
Turn On Delay Time	17 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.6A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	28ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	88 ns
Continuous Drain Current (ID)	-3.6A
Threshold Voltage	-4.5V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Nominal Vgs	-4.5 V
Height	360μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free