FDFS2P102A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDFS2P102A Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Current Rating
-3.3A
Power Dissipation-Max
900mW Ta
Power Dissipation
2W
Forward Current
2mA
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
125m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
182pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.3A Ta
Gate Charge (Qg) (Max) @ Vgs
3nC @ 5V
Rise Time
14ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Forward Voltage
580mV
Fall Time (Typ)
2 ns
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
3.3A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-20V
Dual Supply Voltage
-20V
FET Feature
Schottky Diode (Isolated)
Nominal Vgs
-1.8 V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.00000
$1
500
$0.99
$495
1000
$0.98
$980
1500
$0.97
$1455
2000
$0.96
$1920
2500
$0.95
$2375
FDFS2P102A Product Details
FDFS2P102A BJT Description
The FDFS2P102A P-Channel MOSFET combines the exceptional performance of Infineon PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a SO-8 package. Its Drain-Source Voltage is rated -20 V and it gas an extended operating and storage temperature.