FDFS2P102A BJT Description

The FDFS2P102A P-Channel MOSFET combines the exceptional performance of Infineon PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a SO-8 package. Its Drain-Source Voltage is rated -20 V and it gas an extended operating and storage temperature.

FDFS2P102A MOSFET Features

–3.3 A, –20V  RDS(ON)= 125 [email protected] VGS= –10 V

VF< 0.39 V @ 1 A (TJ= 125°C)

VF< 0.47 V @ 1 A

VF< 0.58 V @ 2 A

Schottky and MOSFET incorporated into single power surface mount

SO-8 package

Electrically independent Schottky and MOSFET pinout for design flexibility

FDFS2P102A MOSFET Applications

Load Switching

Variable-Frequency Drives

Power Electronics

Linear Amplifiers

Servo Controls

PWM Modules