STL60N10F7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STL60N10F7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Operating Temperature
-55°C~175°C TJ
Packaging
Cut Tape (CT)
Series
DeepGATE™, STripFET™ VII
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Resistance
18mOhm
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STL60
Power Dissipation-Max
5W Ta 72W Tc
Element Configuration
Single
Turn On Delay Time
15.2 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
18m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1640pF @ 50V
Current - Continuous Drain (Id) @ 25°C
46A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
16.8ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
24 ns
Continuous Drain Current (ID)
46A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Height
950μm
Length
5.4mm
Width
6.35mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$1.50750
$4.5225
6,000
$1.45800
$8.748
STL60N10F7 Product Details
STL60N10F7 Description
STL60N10F7 belongs to the family of N-channel STripFET? F7 power MOSFET developed by STMicroelectronics. Based on the STripFET? F7 technology and a new trench gate structure, Extremely low on-state resistance, internal capacitance reduction, and gate charge reduction can be ensured for faster and more efficient switching.