APT60M80JVR

new-10%

Manufacturer part number:APT60M80JVR

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 600V 55A 4-Pin SOT-227

Case Package:SOT-23

Datasheet:APT60M80JVR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS V®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	55A
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	568W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	568W
Case Connection	ISOLATED
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	14500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	55A Tc
Gate Charge (Qg) (Max) @ Vgs	870nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	73 ns
Continuous Drain Current (ID)	55A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.08Ohm
Pulsed Drain Current-Max (IDM)	220A
Avalanche Energy Rating (Eas)	3200 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free