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APT64GA90LD30

APT64GA90LD30

APT64GA90LD30

Microsemi Corporation

Trans IGBT Chip N-CH 900V 117A 3-Pin(3+Tab) TO-264

SOT-23

APT64GA90LD30 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 29 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Weight 10.6g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 8™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 500W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 117A
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 44 ns
Test Condition 600V, 38A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 38A
Continuous Collector Current 117A
Turn Off Time-Nom (toff) 352 ns
IGBT Type PT
Gate Charge 162nC
Current - Collector Pulsed (Icm) 193A
Td (on/off) @ 25°C 18ns/131ns
Switching Energy 1192μJ (on), 1088μJ (off)
Height 5.21mm
Length 26.49mm
Width 20.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
45 $11.21444 $504.6498

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