STGP10NB60S

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Manufacturer part number:STGP10NB60S

Manufacturer:STMicroelectronics

Description:STGP10NB60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP10NB60S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	80W
Current Rating	10A
Base Part Number	STGP10
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	80W
Input Type	Standard
Turn On Delay Time	7 μs
Transistor Application	POWER CONTROL
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	29A
Continuous Drain Current (ID)	10A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	1160 ns
Test Condition	480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.75V @ 15V, 10A
Continuous Collector Current	10A
Turn Off Time-Nom (toff)	3100 ns
Gate Charge	33nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	700ns/1.2μs
Switching Energy	600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free