STGFW35HF60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGFW35HF60W Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Number of Pins
3
Weight
6.961991g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
88W
Base Part Number
STGFW35
Element Configuration
Single
Input Type
Standard
Power - Max
88W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
36A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Test Condition
400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 20A
Gate Charge
140nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
30ns/175ns
Switching Energy
290μJ (on), 185μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.857560
$6.85756
10
$6.469396
$64.69396
100
$6.103203
$610.3203
500
$5.757739
$2878.8695
1000
$5.431829
$5431.829
STGFW35HF60W Product Details
STGFW35HF60W Description
The STGFW35HF60W is a 35 A, 600 V Ultrafast IGBT. A new planar technology was used to create this ultrafast IGBT, which has a narrower switching energy variation (Eoff) against temperature. A subset of items created for high switching frequency operation is identified by the suffix "W." (over 100 kHz).