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APT7F120B

APT7F120B

APT7F120B

Microsemi Corporation

MOSFET (Metal Oxide) N-Channel Tube 2.9 Ω @ 3A, 10V ±30V 2565pF @ 25V 80nC @ 10V 1200V TO-247-3

SOT-23

APT7F120B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 2.4Ohm
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Voltage - Rated DC 1.2kV
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 6.6A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 335W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 335W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.9 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2565pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 7A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 7A
Pulsed Drain Current-Max (IDM) 28A
Avalanche Energy Rating (Eas) 575 mJ
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.19000 $7.19
10 $6.47200 $64.72
100 $5.32130 $532.13
500 $4.45842 $2229.21
1,000 $4.02696 $4.02696
APT7F120B Product Details

APT7F120B Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 575 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2565pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 7A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 45 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 28A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 1200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

APT7F120B Features


the avalanche energy rating (Eas) is 575 mJ
a continuous drain current (ID) of 7A
the turn-off delay time is 45 ns
based on its rated peak drain current 28A.
a 1200V drain to source voltage (Vdss)


APT7F120B Applications


There are a lot of Microsemi Corporation
APT7F120B applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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