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APT94N60L2C3G

APT94N60L2C3G

APT94N60L2C3G

Microsemi Corporation

MOSFET (Metal Oxide) N-Channel Tube 35m Ω @ 60A, 10V ±20V 13600pF @ 25V 640nC @ 10V TO-264-3, TO-264AA

SOT-23

APT94N60L2C3G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 24 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 10.6g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 35mOhm
Additional Feature AVALANCHE RATED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 94A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 833W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 833W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 3.9V @ 5.4mA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 94A Tc
Gate Charge (Qg) (Max) @ Vgs 640nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 94A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 282A
Height 5.21mm
Length 26.49mm
Width 20.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $25.81000 $25.81
10 $23.87100 $238.71
100 $20.38670 $2038.67
500 $18.06420 $9032.1
APT94N60L2C3G Product Details

APT94N60L2C3G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13600pF @ 25V.This device conducts a continuous drain current (ID) of 94A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 282A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

APT94N60L2C3G Features


a continuous drain current (ID) of 94A
the turn-off delay time is 110 ns
based on its rated peak drain current 282A.


APT94N60L2C3G Applications


There are a lot of Microsemi Corporation
APT94N60L2C3G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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