FDS6162N3

new-10%

Manufacturer part number:FDS6162N3

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 20V 21A 8-SOIC

Case Package:SOT-23

Datasheet:FDS6162N3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Current Rating	21A
Number of Elements	1
Power Dissipation-Max	3W Ta
Power Dissipation	3W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5mOhm @ 21A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5521pF @ 10V
Current - Continuous Drain (Id) @ 25°C	21A Ta
Gate Charge (Qg) (Max) @ Vgs	73nC @ 4.5V
Rise Time	25ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Input Capacitance	5.521nF
Drain to Source Resistance	45mOhm
Rds On Max	4.5 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free