APTC90DAM60T1G

new-10%

Manufacturer part number:APTC90DAM60T1G

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 900V 59A 10-Pin Case SP-1

Case Package:SOT-23

Datasheet:APTC90DAM60T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP1
Number of Pins	1
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tray
Published	2012
Series	CoolMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	10
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max	462W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	70 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 52A, 10V
Vgs(th) (Max) @ Id	3.5V @ 6mA
Input Capacitance (Ciss) (Max) @ Vds	13600pF @ 100V
Current - Continuous Drain (Id) @ 25°C	59A Tc
Gate Charge (Qg) (Max) @ Vgs	540nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	400 ns
Continuous Drain Current (ID)	59A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.06Ohm
DS Breakdown Voltage-Min	900V
FET Feature	Super Junction
Radiation Hardening	No
RoHS Status	RoHS Compliant