IRF7503TRPBF

join

new-10%

Manufacturer part number:IRF7503TRPBF

Manufacturer:Infineon Technologies

Description:IRF7503TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7503TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	135mOhm
Additional Feature	ULTRA LOW RESISTANCE
Voltage - Rated DC	30V
Max Power Dissipation	1.25W
Terminal Form	GULL WING
Current Rating	2.4A
Base Part Number	IRF7503PBF
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	4.7 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	135m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	10ns
Fall Time (Typ)	5.3 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	2.4A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	14A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1 V
Height	860μm
Length	3mm
Width	3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
4,000	$0.23717	$0.94868
8,000	$0.22187	$1.77496
12,000	$0.20656	$2.47872
28,000	$0.19585	$5.4838

IRF7503TRPBF Description

International Rectifier's Fifth Generation HEXFETs employ cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This benefit gives the designer a highly effective and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The new Micro8 package offers the smallest footprint of any SOIC design, with a footprint area that is half that of the traditional SO-8. Since printed circuit board space is at a premium in these applications, the Micro8 is the perfect device. The Micro8 will readily fit into extremely small application contexts like portable electronics and PCMCIA cards thanks to its tiny profile (1.1mm).