SI1035X-T1-GE3

new-10%

Manufacturer part number:SI1035X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 200/150mA 5.0/8.0ohm @ 4.5V

Case Package:SOT-23

Datasheet:SI1035X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	32.006612mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	8Ohm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	Other Transistors
Max Power Dissipation	250mW
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI1035
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	400mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	180mA 145mA
Gate Charge (Qg) (Max) @ Vgs	0.75nC @ 4.5V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	180mA
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	0.18A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	600μm
Length	1.7mm
Width	1.2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free