SI7949DP-T1-GE3

new-10%

Manufacturer part number:SI7949DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2P-CH 60V 3.2A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7949DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	Other Transistors
Max Power Dissipation	1.5W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI7949
Pin Count	8
JESD-30 Code	R-XDSO-C6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	64m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.2A
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	-5A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.064Ohm
Drain to Source Breakdown Voltage	-60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant