SQJB00EP-T1_GE3

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Manufacturer part number:SQJB00EP-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2 N-CH 60V POWERPAK SO8

Case Package:SOT-23

Datasheet:SQJB00EP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	unknown
JESD-30 Code	R-PSSO-G4
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	48W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	13m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drain Current-Max (Abs) (ID)	25A
Drain-source On Resistance-Max	0.013Ohm
Pulsed Drain Current-Max (IDM)	84A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	26.5 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant