APTM50HM65FT3G

new-10%

Manufacturer part number:APTM50HM65FT3G

Manufacturer:Microsemi Corporation

Description:MOSFET 4N-CH 500V 51A SP3

Case Package:SOT-23

Datasheet:APTM50HM65FT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	390W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Number of Elements	4
Configuration	COMPLEX
Operating Mode	ENHANCEMENT MODE
Power Dissipation	390W
Case Connection	ISOLATED
Turn On Delay Time	21 ns
FET Type	4 N-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	78m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	7000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Rise Time	38ns
Drain to Source Voltage (Vdss)	500V
Fall Time (Typ)	93 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	51A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.078Ohm
DS Breakdown Voltage-Min	500V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free