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FDS89161

FDS89161

FDS89161

ON Semiconductor

FDS89161 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDS89161 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 31W
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Turn On Delay Time 4.2 ns
Power - Max 1.6W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 10V
Rise Time 1.3ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 1.9 ns
Turn-Off Delay Time 7.3 ns
Continuous Drain Current (ID) 2.7A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.105Ohm
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 5 pF
Height 1.5mm
Length 4mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.149973 $1.149973
10 $1.084880 $10.8488
100 $1.023472 $102.3472
500 $0.965539 $482.7695
1000 $0.910886 $910.886
FDS89161 Product Details

FDS89161    Description


This N-Channel MOSFET is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance and ruggedness.

 

FDS89161     Features

 

Shielded Gate MOSFET Technology

Max rDS(on) = 105 mΩat VGS= 10 V, ID = 2.7 A

Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A

High performance trench technology for extremely low rDS(on)

High power and current handling capability in a widely used surface mount package

100% UIL Tested

RoHS Compliant


FDS89161      Applications


This product is general usage and suitable for many different applications.

Synchronous Rectifier

Primary Switch for Bridge Topology

 





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