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FDMA1029PZ

FDMA1029PZ

FDMA1029PZ

ON Semiconductor

FDMA1029PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMA1029PZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 1.4W
Current Rating -3.1A
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Turn On Delay Time 13 ns
Power - Max 700mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 11ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 3.1A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.095Ohm
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1 V
Height 750μm
Length 2mm
Width 2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.281000 $1.281
10 $1.208491 $12.08491
100 $1.140085 $114.0085
500 $1.075552 $537.776
1000 $1.014672 $1014.672
FDMA1029PZ Product Details

FDMA1029PZ    Description

 

  The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications, with two independent P-channel MOSFET with low on-resistance, minimizing conduction loss. Two-way flow is possible.

The MicroFET 2x2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.

 

FDMA1029PZ     Features


--3.1A-20V.Rps=95mΩ@Vas=-4.5V Rps(on)=141mΩ@VGs=-2.5V

Low profile-0.8 mm maximum-in the new package MicroFET2x2mm

HBM ESD protectionlevel>2.5kV(Note3)

RoHS Compliant

Free from halogenated compounds and antimony oxides

 

FDMA1029PZ      Applications


 linear mode applications

 






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