SMMBTA42LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.A transition frequency of 50MHz is present in the part.When collector current reaches its maximum, it can reach 500mA volts.
SMMBTA42LT3G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 50MHz
SMMBTA42LT3G Applications
There are a lot of ON Semiconductor SMMBTA42LT3G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
