2PB709ARL,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PB709ARL,215 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
70MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2PB709A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Transistor Application
SWITCHING
Gain Bandwidth Product
70MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
210 @ 2mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
70MHz
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.096800
$7.0968
10
$6.695094
$66.95094
100
$6.316127
$631.6127
500
$5.958610
$2979.305
1000
$5.621330
$5621.33
2PB709ARL,215 Product Details
2PB709ARL,215 Overview
This device has a DC current gain of 210 @ 2mA 10V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The part has a transition frequency of 70MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.Collector current can be as low as 100mA volts at its maximum.
2PB709ARL,215 Features
the DC current gain for this device is 210 @ 2mA 10V the vce saturation(Max) is 500mV @ 10mA, 100mA the emitter base voltage is kept at 6V a transition frequency of 70MHz
2PB709ARL,215 Applications
There are a lot of Nexperia USA Inc. 2PB709ARL,215 applications of single BJT transistors.