ZTX749 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
ZTX749 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
JEDEC-95 Code
TO-226AE
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
2A
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.91000
$0.91
10
$0.81500
$8.15
100
$0.63510
$63.51
500
$0.52468
$262.34
1,000
$0.41423
$0.41423
ZTX749 Product Details
ZTX749 Overview
In this device, the DC current gain is 100 @ 1A 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.A transition frequency of 100MHz is present in the part.This device displays a 25V maximum voltage - Collector Emitter Breakdown.
ZTX749 Features
the DC current gain for this device is 100 @ 1A 2V the vce saturation(Max) is 500mV @ 200mA, 2A a transition frequency of 100MHz
ZTX749 Applications
There are a lot of Rochester Electronics, LLC ZTX749 applications of single BJT transistors.