MMBTA20LT1 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5mA 10V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

MMBTA20LT1 Features

the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
a transition frequency of 125MHz

MMBTA20LT1 Applications

There are a lot of ON Semiconductor MMBTA20LT1 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter