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QSX1TR

QSX1TR

QSX1TR

ROHM Semiconductor

QSX1TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

QSX1TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.25W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Base Part Number QSX
Pin Count 6
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 60mA, 3A
Collector Emitter Breakdown Voltage 12V
Current - Collector (Ic) (Max) 6A
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.708000 $0.708
10 $0.667925 $6.67925
100 $0.630117 $63.0117
500 $0.594450 $297.225
1000 $0.560802 $560.802
QSX1TR Product Details

QSX1TR Overview


DC current gain in this device equals 270 @ 500mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 60mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.250MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 6A volts.

QSX1TR Features


the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 200mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 250MHz

QSX1TR Applications


There are a lot of ROHM Semiconductor QSX1TR applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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