QSX1TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
QSX1TR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.25W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
QSX
Pin Count
6
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 60mA, 3A
Collector Emitter Breakdown Voltage
12V
Current - Collector (Ic) (Max)
6A
Transition Frequency
250MHz
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.708000
$0.708
10
$0.667925
$6.67925
100
$0.630117
$63.0117
500
$0.594450
$297.225
1000
$0.560802
$560.802
QSX1TR Product Details
QSX1TR Overview
DC current gain in this device equals 270 @ 500mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 60mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.250MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 6A volts.
QSX1TR Features
the DC current gain for this device is 270 @ 500mA 2V the vce saturation(Max) is 200mV @ 60mA, 3A the emitter base voltage is kept at 6V a transition frequency of 250MHz
QSX1TR Applications
There are a lot of ROHM Semiconductor QSX1TR applications of single BJT transistors.