2SB1202T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SB1202T-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2000
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Subcategory
Other Transistors
Max Power Dissipation
1W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2SB1202
Pin Count
3
Configuration
Single
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
-6V
hFE Min
100
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.250439
$1.250439
10
$1.179659
$11.79659
100
$1.112886
$111.2886
500
$1.049892
$524.946
1000
$0.990465
$990.465
2SB1202T-E Product Details
2SB1202T-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Collector current can be as low as 5A volts at its maximum.
2SB1202T-E Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 700mV @ 100mA, 2A the emitter base voltage is kept at -6V
2SB1202T-E Applications
There are a lot of ON Semiconductor 2SB1202T-E applications of single BJT transistors.