JAN2N3700UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N3700UB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/391
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
HIGH RELIABILITY
HTS Code
8541.21.00.95
Max Power Dissipation
500mW
Terminal Position
DUAL
Pin Count
3
Reference Standard
MIL-19500
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Collector Base Voltage (VCBO)
140V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N3700UB Product Details
JAN2N3700UB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 500mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.A maximum collector current of 1A volts is possible.
JAN2N3700UB Features
the DC current gain for this device is 50 @ 500mA 10V the vce saturation(Max) is 500mV @ 50mA, 500mA
JAN2N3700UB Applications
There are a lot of Microsemi Corporation JAN2N3700UB applications of single BJT transistors.