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JAN2N720A

JAN2N720A

JAN2N720A

Microsemi Corporation

JAN2N720A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N720A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact PlatingLead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/182
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation500mW
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation500mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 5V @ 15mA, 150mA
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1300 items

Pricing & Ordering

QuantityUnit PriceExt. Price
118$8.29449$978.74982

JAN2N720A Product Details

JAN2N720A Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 5V @ 15mA, 150mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A maximum collector current of 500mA volts can be achieved.

JAN2N720A Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 5V @ 15mA, 150mA
the emitter base voltage is kept at 7V

JAN2N720A Applications


There are a lot of Microsemi Corporation JAN2N720A applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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