JANS2N3763 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANS2N3763 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Surface Mount
NO
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/396
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Reach Compliance Code
unknown
Configuration
Single
Power - Max
1W
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1A 1.5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
900mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1.5A
Transition Frequency
150MHz
Power Dissipation-Max (Abs)
1W
RoHS Status
Non-RoHS Compliant
JANS2N3763 Product Details
JANS2N3763 Overview
This device has a DC current gain of 20 @ 1A 1.5V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 900mV @ 100mA, 1A.There is a transition frequency of 150MHz in the part.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
JANS2N3763 Features
the DC current gain for this device is 20 @ 1A 1.5V the vce saturation(Max) is 900mV @ 100mA, 1A a transition frequency of 150MHz
JANS2N3763 Applications
There are a lot of Microsemi Corporation JANS2N3763 applications of single BJT transistors.