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JANS2N3763

JANS2N3763

JANS2N3763

Microsemi Corporation

JANS2N3763 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANS2N3763 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Surface Mount NO
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/396
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Reach Compliance Code unknown
Configuration Single
Power - Max 1W
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 1.5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1.5A
Transition Frequency 150MHz
Power Dissipation-Max (Abs) 1W
RoHS Status Non-RoHS Compliant
JANS2N3763 Product Details

JANS2N3763 Overview


This device has a DC current gain of 20 @ 1A 1.5V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 900mV @ 100mA, 1A.There is a transition frequency of 150MHz in the part.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.

JANS2N3763 Features


the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
a transition frequency of 150MHz

JANS2N3763 Applications


There are a lot of Microsemi Corporation JANS2N3763 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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