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JANTX2N3019

JANTX2N3019

JANTX2N3019

Microsemi Corporation

JANTX2N3019 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3019 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/391
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 800mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 800mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $11.62040 $1162.04
JANTX2N3019 Product Details

JANTX2N3019 Overview


This device has a DC current gain of 50 @ 500mA 10V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 7V to achieve high efficiency.The part has a transition frequency of 100MHz.The maximum collector current is 1A volts.

JANTX2N3019 Features


the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

JANTX2N3019 Applications


There are a lot of Microsemi Corporation JANTX2N3019 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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