KSA473YTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 100MHz.When collector current reaches its maximum, it can reach 3A volts.
KSA473YTU Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz
KSA473YTU Applications
There are a lot of ON Semiconductor KSA473YTU applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
