MMBT2222LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.250MHz is present in the transition frequency.As a result, it can handle voltages as low as 30V volts.Maximum collector currents can be below 600mA volts.
MMBT2222LT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMBT2222LT1G Applications
There are a lot of ON Semiconductor MMBT2222LT1G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
