NJVMJB44H11T4G Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Collector current can be as low as 10A volts at its maximum.
NJVMJB44H11T4G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
NJVMJB44H11T4G Applications
There are a lot of ON Semiconductor NJVMJB44H11T4G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
