KSA1010YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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KSA1010YTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 15 hours ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2001
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
1.5W
Current Rating
-8A
Base Part Number
KSA1010
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 3A 5V
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
600mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-600mV
Collector Base Voltage (VCBO)
-100V
Emitter Base Voltage (VEBO)
-7V
hFE Min
40
Height
18.95mm
Length
9.9mm
Width
4.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$14.605520
$14.60552
10
$13.778792
$137.78792
100
$12.998861
$1299.8861
500
$12.263076
$6131.538
1000
$11.568940
$11568.94
KSA1010YTU Product Details
KSA1010YTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 3A 5V.The collector emitter saturation voltage is -600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor is possible to have a collector current as low as 7A volts at Single BJT transistors maximum.
KSA1010YTU Features
the DC current gain for this device is 100 @ 3A 5V a collector emitter saturation voltage of -600mV the vce saturation(Max) is 600mV @ 500mA, 5A the emitter base voltage is kept at -7V the current rating of this device is -8A
KSA1010YTU Applications
There are a lot of ON Semiconductor KSA1010YTU applications of single BJT transistors.