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KSA1010YTU

KSA1010YTU

KSA1010YTU

ON Semiconductor

KSA1010YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA1010YTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2001
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 1.5W
Current Rating -8A
Base Part Number KSA1010
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 3A 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 600mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage -600mV
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -7V
hFE Min 40
Height 18.95mm
Length 9.9mm
Width 4.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.605520 $14.60552
10 $13.778792 $137.78792
100 $12.998861 $1299.8861
500 $12.263076 $6131.538
1000 $11.568940 $11568.94
KSA1010YTU Product Details

KSA1010YTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 3A 5V.The collector emitter saturation voltage is -600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor is possible to have a collector current as low as 7A volts at Single BJT transistors maximum.

KSA1010YTU Features


the DC current gain for this device is 100 @ 3A 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -8A

KSA1010YTU Applications


There are a lot of ON Semiconductor KSA1010YTU applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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