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JANTX2N3440

JANTX2N3440

JANTX2N3440

Microsemi Corporation

JANTX2N3440 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3440 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/368
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 800mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 800mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA 10V
Current - Collector Cutoff (Max) 2μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
Collector Emitter Breakdown Voltage 250V
Transition Frequency 15MHz
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.211182 $8.211182
10 $7.746399 $77.46399
100 $7.307923 $730.7923
500 $6.894267 $3447.1335
1000 $6.504026 $6504.026
JANTX2N3440 Product Details

JANTX2N3440 Overview


DC current gain in this device equals 40 @ 20mA 10V, which is the ratio of the base current to the collector current.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.A transition frequency of 15MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

JANTX2N3440 Features


the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz

JANTX2N3440 Applications


There are a lot of Microsemi Corporation JANTX2N3440 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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