MJE5850G Overview

This device has a DC current gain of 5 @ 5A 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 5V @ 3A, 8A means Ic has reached its maximum value(saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

MJE5850G Features

the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 5V @ 3A, 8A
the emitter base voltage is kept at 6V
the current rating of this device is -8A

MJE5850G Applications

There are a lot of ON Semiconductor MJE5850G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter