FZT605TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT605TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2012
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
120V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT605
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A 5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage
120V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
120V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
10V
hFE Min
5000
Continuous Collector Current
1.5A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.649760
$5.64976
10
$5.329962
$53.29962
100
$5.028266
$502.8266
500
$4.743647
$2371.8235
1000
$4.475139
$4475.139
FZT605TA Product Details
FZT605TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 1A 5V.A collector emitter saturation voltage of 1V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1mA, 1A.Continuous collector voltage should be kept at 1.5A for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.150MHz is present in the transition frequency.There is a breakdown input voltage of 120V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
FZT605TA Features
the DC current gain for this device is 2000 @ 1A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1.5V @ 1mA, 1A the emitter base voltage is kept at 10V the current rating of this device is 2A a transition frequency of 150MHz
FZT605TA Applications
There are a lot of Diodes Incorporated FZT605TA applications of single BJT transistors.