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FZT605TA

FZT605TA

FZT605TA

Diodes Incorporated

FZT605TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT605TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 120V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT605
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 120V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 10V
hFE Min 5000
Continuous Collector Current 1.5A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.649760 $5.64976
10 $5.329962 $53.29962
100 $5.028266 $502.8266
500 $4.743647 $2371.8235
1000 $4.475139 $4475.139
FZT605TA Product Details

FZT605TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 1A 5V.A collector emitter saturation voltage of 1V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1mA, 1A.Continuous collector voltage should be kept at 1.5A for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.150MHz is present in the transition frequency.There is a breakdown input voltage of 120V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

FZT605TA Features


the DC current gain for this device is 2000 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 2A
a transition frequency of 150MHz

FZT605TA Applications


There are a lot of Diodes Incorporated FZT605TA applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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