KSC2331YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC2331YTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins
3
Weight
371.1027mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Current Rating
700mA
Frequency
50MHz
Base Part Number
KSC2331
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 50mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
8V
hFE Min
40
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.063760
$0.06376
500
$0.046882
$23.441
1000
$0.039069
$39.069
2000
$0.035843
$71.686
5000
$0.033498
$167.49
10000
$0.031161
$311.61
15000
$0.030136
$452.04
50000
$0.029632
$1481.6
KSC2331YTA Product Details
KSC2331YTA Overview
In this device, the DC current gain is 120 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 8V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Breakdown input voltage is 60V volts.The maximum collector current is 700mA volts.
KSC2331YTA Features
the DC current gain for this device is 120 @ 50mA 2V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at 8V the current rating of this device is 700mA a transition frequency of 50MHz
KSC2331YTA Applications
There are a lot of ON Semiconductor KSC2331YTA applications of single BJT transistors.