MSB92AWT1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 10V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).In the part, the transition frequency is 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MSB92AWT1G Features

the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz

MSB92AWT1G Applications

There are a lot of ON Semiconductor MSB92AWT1G applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver