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MSB92AWT1G

MSB92AWT1G

MSB92AWT1G

ON Semiconductor

MSB92AWT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MSB92AWT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MSB92W
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.355906 $0.355906
10 $0.335760 $3.3576
100 $0.316755 $31.6755
500 $0.298825 $149.4125
1000 $0.281911 $281.911
MSB92AWT1G Product Details

MSB92AWT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 10V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).In the part, the transition frequency is 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MSB92AWT1G Features


the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz

MSB92AWT1G Applications


There are a lot of ON Semiconductor MSB92AWT1G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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