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JANTX2N3637

JANTX2N3637

JANTX2N3637

Microsemi Corporation

JANTX2N3637 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3637 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/357
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 175V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 175V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 650ns
Turn On Time-Max (ton) 200ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.424000 $10.424
10 $9.833962 $98.33962
100 $9.277323 $927.7323
500 $8.752191 $4376.0955
1000 $8.256784 $8256.784
JANTX2N3637 Product Details

JANTX2N3637 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 50mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.A transition frequency of 200MHz is present in the part.The maximum collector current is 1A volts.

JANTX2N3637 Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

JANTX2N3637 Applications


There are a lot of Microsemi Corporation JANTX2N3637 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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