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JANTX2N5153

  • JANTX2N5153
  • JANTX2N5153

JANTX2N5153

JANTX2N5153

Microsemi Corporation

JANTX2N5153 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N5153 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/545
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 4
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2.5A 5V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 5A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 70MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5.5V
Turn On Time-Max (ton) 500ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $14.45850 $1445.85
JANTX2N5153 Product Details

JANTX2N5153 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 70 @ 2.5A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500mA, 5A.Keeping the emitter base voltage at 5.5V allows for a high level of efficiency.70MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

JANTX2N5153 Features


the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 70MHz

JANTX2N5153 Applications


There are a lot of Microsemi Corporation JANTX2N5153 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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