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JANTX2N6051

JANTX2N6051

JANTX2N6051

Microsemi Corporation

JANTX2N6051 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N6051 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/501
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Power - Max 150W
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 6A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 120mA, 12A
Collector Emitter Saturation Voltage 3V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $60.90210 $6090.21
JANTX2N6051 Product Details

JANTX2N6051 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 6A 3V.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A maximum collector current of 12A volts can be achieved.

JANTX2N6051 Features


the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V

JANTX2N6051 Applications


There are a lot of Microsemi Corporation JANTX2N6051 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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