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BSS5130AHZGT116

BSS5130AHZGT116

BSS5130AHZGT116

ROHM Semiconductor

BSS5130AHZGT116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

BSS5130AHZGT116 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 380mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 320MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.440275 $0.440275
10 $0.415354 $4.15354
100 $0.391843 $39.1843
500 $0.369663 $184.8315
1000 $0.348739 $348.739
BSS5130AHZGT116 Product Details

BSS5130AHZGT116 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.When VCE saturation is 380mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BSS5130AHZGT116 Features


the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 380mV @ 25mA, 500mA

BSS5130AHZGT116 Applications


There are a lot of ROHM Semiconductor BSS5130AHZGT116 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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