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BSS5130AHZGT116

BSS5130AHZGT116

BSS5130AHZGT116

ROHM Semiconductor

BSS5130AHZGT116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

BSS5130AHZGT116 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 380mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 320MHz
RoHS StatusRoHS Compliant
In-Stock:13807 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.440275$0.440275
10$0.415354$4.15354
100$0.391843$39.1843
500$0.369663$184.8315
1000$0.348739$348.739

BSS5130AHZGT116 Product Details

BSS5130AHZGT116 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.When VCE saturation is 380mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BSS5130AHZGT116 Features


the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 380mV @ 25mA, 500mA

BSS5130AHZGT116 Applications


There are a lot of ROHM Semiconductor BSS5130AHZGT116 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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