BSS5130AHZGT116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
BSS5130AHZGT116 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
200mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
380mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
320MHz
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.440275
$0.440275
10
$0.415354
$4.15354
100
$0.391843
$39.1843
500
$0.369663
$184.8315
1000
$0.348739
$348.739
BSS5130AHZGT116 Product Details
BSS5130AHZGT116 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.When VCE saturation is 380mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BSS5130AHZGT116 Features
the DC current gain for this device is 270 @ 100mA 2V the vce saturation(Max) is 380mV @ 25mA, 500mA
BSS5130AHZGT116 Applications
There are a lot of ROHM Semiconductor BSS5130AHZGT116 applications of single BJT transistors.