PBSS304NXZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS304NXZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Number of Terminations
3
Terminal Position
SINGLE
Terminal Form
FLAT
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
290mV @ 80mA, 4A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
4.7A
Transition Frequency
130MHz
Frequency - Transition
130MHz
Turn Off Time-Max (toff)
555ns
Turn On Time-Max (ton)
110ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.26000
$0.26
500
$0.2574
$128.7
1000
$0.2548
$254.8
1500
$0.2522
$378.3
2000
$0.2496
$499.2
2500
$0.247
$617.5
PBSS304NXZ Product Details
PBSS304NXZ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 2V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 290mV @ 80mA, 4A.There is a transition frequency of 130MHz in the part.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PBSS304NXZ Features
the DC current gain for this device is 300 @ 500mA 2V the vce saturation(Max) is 290mV @ 80mA, 4A a transition frequency of 130MHz
PBSS304NXZ Applications
There are a lot of Nexperia USA Inc. PBSS304NXZ applications of single BJT transistors.