SMMBT4401LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 1V DC current gain.The collector emitter saturation voltage is 750mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.During maximum operation, collector current can be as low as 600mA volts.
SMMBT4401LT1G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
SMMBT4401LT1G Applications
There are a lot of ON Semiconductor SMMBT4401LT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
